高质量氮化镓(GaN)材料是发展第三代半导体光电子与微电子器件的根基。大失配、强极化和非平衡态生长是GaN基材料及其量子结构的固有特点, 对其生长动力学和载流子调控规律的研究具有重要的科学意义与实用价值, 受到各国科学界与产业界广泛高度重视。本文对大失配、强极化氮化物半导体材料体系外延生长动力学和载流子调控规律进行了研究, 旨在攻克蓝光发光效率限制瓶颈, 突破高Al和高In氮化物材料制备难题, 实现高发光效率量子阱和高迁移率异质结构, 制备多波段、高效率发光器件和高频率、高耐压电子器件, 实现颠覆性的技术创新和应用, 带动电子材料产业转型升级。

High quality GaN-based material system is the basis of developing the third generation semiconductor optoelectronic and microelectronic devices. The GaN-based materials and quantum structures have the properties of large mismatch, strong polarization, and nonequilibrium growth. The research on growth dynamics and carrier control of GaN-based material has important research significance and practical value, and is attracting the attention of scientific and industrial communities. In this paper, the growth dynamics and carrier control of GaN-based material with large mismatch and strong polarization is investigated, in order to get over the bottle-neck of low emitting efficiency of blue light, break through the difficulty of fabricating GaN-based material with high Al- and high In-composition, and achieve high mobility of heterostructure material and high quantum efficiency of optoelectronic devices. By the fabrication of emitting devices with high-efficiency multi-wavelength and electronic devices with high-frequency high-breakdown, the technology innovation, industrial transformation and upgrade can be realized.