利用射频磁控溅射法在玻璃衬底上沉积SnS薄膜并对其进行快速退火处理, 利用X射线衍射(XRD)、拉曼光谱(Raman)、X射线能量色散谱(EDS)、原子力显微镜(AFM)和紫外-可见-近红外(UV-Vis-NIR)分光光度计研究了不同溅射功率(60~120 W)条件下制备的SnS薄膜的晶体结构、物相组成、化学组分、表面形貌以及有关光学特性。结果表明: 经快速退火的薄膜均已结晶, 提高溅射功率有利于改善薄膜的结晶质量、生长择优取向程度和化学配比, 薄膜的平均颗粒尺寸呈增大趋势; 溅射功率为100 W的薄膜样品的结晶质量和择优取向度高, 薄膜应变最小, 且为纯相SnS薄膜, Sn/S组分的量比为1∶1.09, 吸收系数达105 cm-1量级, 直接禁带宽度为1.54 eV。

SnS thin films were prepared on glass substrates by RF magnetron sputtering technique and then were rapidly annealed. The crystalline structure, phase composition, chemical composition, surface morphology and relevant optical properties of SnS thin films grown under various sputtering power (60-120 W) are investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), energy dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM) and ultraviolet-visible-near infrared spectrophotometry (UV-Vis-NIR). The results show that all the rapidly annealed thin films are crystallized. The crystalline quality, degree of preferential orientation and stoichiometry of thin films are improved and the average particle sizes of thin films are enlarged by the increase of sputtering power. Under the condition of sputtering power of 100 W, the sample has high crystalline quality and degree of preferential orientation, the least strain, pure-phase SnS thin film, Sn/S mole ratio of 1∶1.09, the absorption coefficient of 105 cm-1 and the direct band-gap of 1.54 eV.