利用光致发光技术对两种厚度的多晶硅片进行缺陷检测并分类, 在缺陷比例相同的条件下分析了硅片厚度对太阳电池性能的影响。薄(175 μm)太阳电池在开路电压、短路电流、转换效率方面明显低于同等缺陷的厚(190 μm)电池, 即硅片厚度的降低会引起电池性能的下降。此外, 厚度降低后, 低缺陷硅片的电池效率损失大于高缺陷硅片。

Multicrystalline silicon wafers with two different thicknesses were tested by photoluminescence and classified according to defect ratio, and then the influence of wafer thickness on the performance of multicrystalline silicon solar cell based on equivalent defect ratio was investigated. It was found that there was an obvious decrease in open circuit voltage, short circuit current and conversion efficiency for thin solar cells (175μm) , compared with that of thick cells (190μm) with equivalent defect ratio, indicating that reducing wafer thickness could cause the degradation of solar cell performance. In addition, for the material with low defect ratio, reducing the wafer thickness could lead to more efficiency loss than the material with high defect ratio.