为增强晶体硅太阳能电池的光利用率, 提高光电转换效率, 研究了硅纳米线(Silicon nanowires, SiNWs)阵列的光学特性。首先运用时域有限差分(Finite-Difference Time-Domain, FDTD)方法对硅纳米线阵列在300~1100 nm波段的吸收率进行了模拟计算, 并对硅纳米线阵列的光吸收效率进行了优化计算。结果表明, 当硅纳米线阵列的周期为600 nm, 填充比为0.7时硅纳米线阵列的光吸收效率最大, 可达32.93%。然后采用金属催化化学刻蚀(Metal Assisted Chemical Etching, MACE)的方法, 于室温、室压条件下在单晶硅表面制备了不同结构的硅纳米线阵列, 并测试了其反射率R, 并对实验结果进行了分析, 表明硅纳米线阵列相对于单晶硅薄膜, 其减反射增强吸收的效果明显。因此, 在硅表面制备这种具有特殊形貌的微结构不仅能降低太阳电池的制造成本, 同时还能大幅降低晶体硅表面的光反射, 增强光吸收, 提高电池的光电转换效率。

The optical properties of silicon nanowire arrays on silicon wafer were studied in order to trap more sunlight onto the crystalline silicon solar cell and improve the photo-electric conversion efficiency. The FDTD method is used for optical simulation and efficiency optimization. The simulation results show that absorption efficiency can reach 32.93% when the period of silicon nanowire arrays is 600 nm and the filling ratio is 0.7. At room temperature and ambient pressure, silicon nanowire arrays with different structures in monocrystalline silicon surface was prepared, the reflectance R was tested, and the experimental results were analyzed. The results show that the antireflection effect is obvious compared with the reflectivity of the single crystal silicon. The minus reflection microstructures could reduce the sun battery microstructure costs, at the same time, reduce the monocrystalline silicon surface light reflecting loss, and improve the photoelectric conversion efficiency.