太赫兹科学与电子信息学报, 2016, 14 (2): 233, 网络出版: 2016-12-07
X频段FET混频器的仿真设计
Simulation and design of X-band FET drain mixer
场效应管混频器 谐波平衡法 变换矩阵法 Field Effect Transistor drain mixer harmonic balance method transform matrix method
摘要
主要研究X 频段下变频场效应管(FET)混频器的设计与仿真，利用谐波平衡法和变换矩阵法对FET 漏极混频器的工作原理进行分析，根据设计要求选取合适的FET 管，运用先进设计系统( A D S ) 软件对电路进行设计、仿真优化和加工测试。测试结果表明， 在射频频率为12.3 GHz~13.2 GHz，中频频率为1.6 GHz~2.5 GHz 时，变频损耗小于5 dB。
Abstract
The simulation and design of X-band down-converter Field Effect Transistor(FET) mixer is presented. The basic principle of FET drain mixer is analyzed by the harmonic balance method and the transform matrix method. How to choose the appropriate FET transistor is based on the requirement for design. The circuit is designed，simulated and optimized with Advanced Design System(ADS) software. With Radio Frequency(RF) of 12.3 GHz-13.2 GHz and Intermediate Frequency(IF) of 1.6 GHz-2.5 GHz， the conversion loss is less than 5 dB.
王鹏. X频段FET混频器的仿真设计[J]. 太赫兹科学与电子信息学报, 2016, 14(2): 233. WANG Peng. Simulation and design of X-band FET drain mixer[J]. Journal of terahertz science and electronic information technology, 2016, 14(2): 233.
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