多晶硅在光电子器件领域具有较为重要的用途。 利用磁控溅射镀膜系统, 通过共溅射技术在玻璃衬底上制备了非晶硅铝（α-Si/Al）复合膜, 将Al原子团包覆在α-Si基质中, 膜中的Al含量可通过Al和Si的溅射功率比来调节。 复合膜于N2气氛中进行350 ℃, 10 min快速退火处理, 制备出了多晶硅薄膜。 利用X射线衍射仪、 拉曼光谱仪和紫外-可见光-近红外分光光度计对多晶硅薄膜的性能进行表征, 研究了Al含量对多晶硅薄膜性能的影响。 结果表明: 共溅射法制备的α-Si/Al复合膜在低温光热退火下晶化为晶粒分布均匀的多晶硅薄膜; 随着膜中Al含量逐渐增加, 多晶硅薄膜的晶化率、 晶粒尺寸逐渐增加, 带隙则逐渐降低; Al/Si溅射功率比为0.1时可获得纳米晶硅薄膜, Al/Si溅射功率比为0.3时得到晶化率较高的多晶硅薄膜, 通过Al含量的调节可实现多晶硅薄膜的晶化率、 晶粒尺寸及带隙的可控。

The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios. The as-prepared α-Si films were converted into polycrystalline films by using a rapid thermal annealing (RTP) at low temperature of 350 ℃ for 10 minutes in N2 atmosphere. An X-ray diffractometer, and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films. The influences of Al content on the properties of the Pc-Si films were studied. The results showed that the polycrystalline silicon films were obtained from α-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing. The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content, while the optical band gap was reduced. The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1. And a higher Crystallization rate (≥85%) of polycrystalline silicon films were obtained when the ratio was 0.3. The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films.