探测器采用浸没透镜结构的单元光伏芯片,工作波段为2.5~3.2 μm。采用储能焊TO9管壳封装,将二级热电致冷器、 热敏电阻、透镜结构的HgCdTe红外探测器封装为一红外探测器组件,组件可在室温至-50 ℃下工作,经过老炼、力学和热学环境适应性试验后,结果表明,HgCdTe红外探测器的零偏电阻(R0)变化率、探测器峰值电流响应率(Rλp,I)变化率和热电致冷器(TEC)的交流阻抗(R)的变化率均小于5%,探测器暗电流Id@-0.1V≤9×10-7A,探测器的漏率优于1×10-7 Torr·l/s,组件的密封性达到了航天要求。

The unit photovoltaic chip is integrated with immersion lens structure, the working wavelength is 2.5~3.2 μm. The energy storage welding TO9 shell package, the second stage thermoelectric cooler, a thermistor and a lens structure of HgCdTe infrared detector package for infrared detector assembly, the assembly can work at room temperature to -50 ℃. After the ageing, mechanical and thermal environmental compatibility experiment, the results showed that the change rate of HgCdTe detector bias resistance(R0) 、the response(Rλp,I) and impedance of a thermoelectric cooler(R) is less than 5%; the dark current(Id@-0.1V) is less than 9×10-7 A; the leakage rate is better than that of 1×10-7 Torr·l/s. The sealing of assembly has reached the requirements of the space.