运用半导体二维数值模拟软件sentaurus TCAD, 对基于p型衬底制作的横向抗晕内线转移CCD的弥散特性进行了数值模拟研究, 建立了sentaurus TCAD软件模拟横向抗晕内线转移CCD器件仿真模型, 对影响器件弥散特性的光敏区n型区域、垂直CCD p阱进行了模拟分析。结果表明, 光敏区n型区域注入能量控制在450~550keV, 垂直CCD p阱注入能量控制在200~600keV, 剂量控制在4.0×1012~8.0×1012cm-2, 器件弥散特性最佳。

By using two-dimensional simulation software of sentaurus TCAD, the dispersion characteristics of lateral-blooming interline transfer charge coupled device(IT-CCD) were simulated, thus the simulation model based on sentaurus TCAD software was established. The influence of n-region and p-well of vertical CCD on dispersion characteristics were simulated. It is indicated that the implant energy of both the photosensitive n-region and the vertical CCD p-well should be controlled in the range of 450~550KeV and 200~600KeV, respectively, and the implant dose should be in the range of 4.0×1012~8.0×1012cm-2。