红外与毫米波学报, 2016, 35 (6): 641, 网络出版: 2017-01-12
基于60 nm T型栅fT & fmax为170 & 210 GHz 的InAlN/GaN HFETs 器件
60 nm T-shaped-gate InAlN/GaN HFETs with fT & fmax of 170 & 210 GHz
异质结场效应晶体管(HFETs) 电流增益截止频率(fT) 最大振荡频率(fmax) InAlN/GaN InAlN/GaN heterostructure field-effect transistors(HFET) unity current gain cut-off frequency(fT) maximum oscillation frequency(fmax)
摘要
基于蓝宝石衬底InAlN/GaN异质结材料研制具有高电流增益截止频率(fT)和最大振荡频率(fmax)的InAlN/GaN异质结场效应晶体管 (HFETs).基于再生长n+ GaN欧姆接触工艺实现了器件尺寸的缩小, 有效源漏间距(Lsd)缩小至600 nm.此外, 采用自对准栅工艺制备60 nm T型栅.由于器件尺寸的缩小, 在Vgs= 1 V时, 器件最大饱和电流(Ids)达到1.89 A/mm, 峰值跨导达到462 mS/mm.根据小信号测试结果, 外推得到器件的fT和fmax分别为170 GHz和210 GHz, 该频率特性为国内InAlN/GaN HFETs器件频率的最高值.
Abstract
Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) on sapphire substrate with high unity current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) were fabricated and characterized. In the device, scaled source-to-drain distance (Lsd) of 600 nm was realized by employing nonalloyed regrown n+-GaN Ohmic contacts. Moreover, a 60-nm T-shaped gate was fabricated by self-aligned-gate technology. A high drain saturation current density (Ids) of 1.89 A/mm @ Vgs= 1 V and a peak extrinsic transconductance (gm) of 462 mS/mm were obtained in the scaled InAlN/GaN HFETs. In addition, from the small-signal RF measurements, the values of fT and fmax for the device with 60-nm gate were extrapolated to be 170 GHz and 210 GHz at the same bias. To our knowledge, they are the highest values of fT and fmax for the domestic InAlN/GaN HFETs.
吕元杰, 冯志红, 张志荣, 宋旭波, 谭鑫, 郭红雨, 尹甲运, 房玉龙, 蔡树军. 基于60 nm T型栅fT & fmax为170 & 210 GHz 的InAlN/GaN HFETs 器件[J]. 红外与毫米波学报, 2016, 35(6): 641. LV Yuan-Jie, FENG Zhi-Hong, ZHANG Zhi-Rong, SONG Xu-Bo, TAN Xin, GUO Hong-Yu, YIN Jia-Yun, FANG Yu-Long, CAI Shu-Jun. 60 nm T-shaped-gate InAlN/GaN HFETs with fT & fmax of 170 & 210 GHz[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 641.
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