发光学报, 2017, 38 (1): 57, 网络出版: 2017-02-09   

量子阱层和垒层具有不同Al组分的270/290/330 nm AlGaN基深紫外LED光电性能

270/290/330 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes with Different Al Content in Quantum Wells and Barriers
作者单位
1 无锡职业技术学院 汽车与交通学院, 江苏 无锡214121
2 江南大学 理学院, 江苏 无锡214122
摘要
为了研究AlGaN量子阱层和垒层中Al组分不同对AlGaN基深紫外发光二极管(LED)光电性能的影响,本文利用MOCVD生长、光刻和干法刻蚀工艺制备了AlGaN量子阱层和垒层具有不同Al组分的270/290/330 nm深紫外LED,通过实验和数值模拟计算方法发现,量子阱层和垒层中具有低Al组分紫外LED的AlGaN材料具有较低的位错密度、较高的光输出功率和外量子效率。通过电流-电压(I-V)曲线拟合出的较大的理想因子(>3.5)和能带结构图表明,AlGaN深紫外LED的电流产生是隧穿机制占据主导作用,这是因为高Al组分AlGaN量子阱中强极化场造成了有源层区域较大的能带弯曲和电势降。
Abstract
The optical and electrical properties of 270/290/330 nm AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) with different Al content in quantum wells and barriers were investigated systematically. Based on the experimental and numerical study, It is observed that the UV LEDs with longer wavelength and lower Al composition in AlGaN multiple quantum wells (MQWs) possess less dislocation density, higher light output power and internal quantum efficiency. The large ideality factors calculated from I-V curves and simulated energy band profiles indicate that the current in the deep UV LEDs with high Al content is dominated by tunneling mechanism, which is attribute to the resulting potential drop in the active region caused by large polarization field in AlGaN MQWs.

王福学, 叶煊超. 量子阱层和垒层具有不同Al组分的270/290/330 nm AlGaN基深紫外LED光电性能[J]. 发光学报, 2017, 38(1): 57. WANG Fu-xue, YE Xuan-chao. 270/290/330 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes with Different Al Content in Quantum Wells and Barriers[J]. Chinese Journal of Luminescence, 2017, 38(1): 57.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!