中国激光, 2017, 44 (3): 0301005, 网络出版: 2017-03-08   

850 nm垂直腔面发射激光器结构优化与制备 下载: 695次

Structural Optimization and Fabrication of 850 nm Vertical-Cavity Surface-Emitting Laser
作者单位
长春理工大学高功率半导体激光国防科技国家重点实验室, 吉林 长春 130022
摘要
根据分布布拉格反射镜(DBR)的工作原理,优化量子阱(QW)和DBR结构,采用Crosslight 计算机模拟软件模拟了垂直腔面发射半导体激光器(VCSEL)的反射谱和QW增益谱,确定QW组分、厚度以及DBR的对数。采用分子束外延技术外延生长并制备了850 nm顶发射VCSEL。测试结果表明,阱宽为5 nm的In0.075Ga0.925As/Al0.35Ga0.65As QW,在室温下激射波长在840 nm左右,设计的顶发射VCSEL结构通过Ocean Optics Spectra Suite软件验证,得到室温下的光谱中心波长在850 nm附近,证实了结构设计的正确性。
Abstract
According to the principle of distributed Bragg reflector (DBR), the quantum well (QW) and DBR structures are optimized. By employing Crosslight computer simulation software, the reflectance spectrum and the QW gain spectrum of vertical cavity surface emitting laser (VCSEL) are simulated, and the QW composition, width and pairs of the DBR are determined. The high quality epitaxial wafers of 850 nm top-emitting VCSEL are grown by the molecular beam epitaxy technology and processed into devices. The experimental results indicate that the lasing wavelength from the In0.075Ga0.925As/Al0.35Ga0.65As QW structure with well width of 5 nm is approximately 840 nm at room temperature, and the theoretical results obtained by Ocean Optics Spectra Suite software show that the central wavelength of the spectrum is near to 850 nm at room temperature. The results verify the correctness of the design.

冯源, 郝永芹, 王宪涛, 刘国军, 晏长岭, 张家斌, 李再金, 李洋. 850 nm垂直腔面发射激光器结构优化与制备[J]. 中国激光, 2017, 44(3): 0301005. Feng Yuan, Hao Yongqin, Wang Xiantao, Liu Guojun, Yan Changling, Zhang Jiabin, Li Zaijin, Li Yang. Structural Optimization and Fabrication of 850 nm Vertical-Cavity Surface-Emitting Laser[J]. Chinese Journal of Lasers, 2017, 44(3): 0301005.

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