Chinese Optics Letters, 2017, 15 (6): 061401, Published Online: Jul. 20, 2018   

Parasitic lasing in large aperture Ti:sapphire chirped pulse amplifier Download: 985次

Author Affiliations
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 ShanghaiTech University, Shanghai 200120, China
3 University of Chinese Academy of Sciences, Beijing 100039, China
Abstract
We research some properties of parasitic lasing (PL) in the Ti:sapphire chirped pulse amplifier with the crystal diameter of 100 mm. The evolutionary process from the spontaneous emission to the PL and its influence on amplified output energy, spectrum, and beam profile are experimentally measured. The threshold of PL in the crystal is 22 J, and the output signal can still keep rising with the pump when the pump energy is below 38 J. The PL has no obvious impact on the output spectrum and beam profile besides the energy.

Zutao Fan, Zebiao Gan, Xiaoyan Liang, Lianghong Yu, Wenqi Li, Zhen Guo, Xiaolong Yuan, He Cao, Pei Huang, Ruxin Li, Zhizhan Xu. Parasitic lasing in large aperture Ti:sapphire chirped pulse amplifier[J]. Chinese Optics Letters, 2017, 15(6): 061401.

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