Chinese Optics Letters, 2017, 15 (6): 062501, Published Online: Jul. 20, 2018
Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures Download: 788次
250.5960 Semiconductor lasers 140.0140 Lasers and laser optics 230.0230 Optical devices 250.0250 Optoelectronics
Abstract
A new configuration of the confinement structure is utilized to improve optoelectronic performance, including threshold current, ac current gain, optical bandwidth, and optical output power of a single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters, including electron mobility, recombination lifetime, optical confinement factor, electron capture time, and photon lifetime, are calculated for new structures. Based on solving the continuity equation in separate confinement heterostructures, the threshold current reduces 67%, the optical output power increases 37%, and the 3 dB optical bandwidth increases to 21 GHz (compared to 19.5 GHz in the original structure) when the graded index layers of Al ξ Ga 1 ξ As (ξ : 0.05 → 0 in the left side of quantum well, ξ : 0 → 0.02 in the right side of quantum well) are used instead of uniform GaAs in the base region.
Mohammad Hosseini, Hassan Kaatuzian, Iman Taghavi. Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures[J]. Chinese Optics Letters, 2017, 15(6): 062501.