为满足硫化锌(ZnS)薄膜在光学薄膜领域进一步应用的要求，基于原子层沉积(Atomic Layer Deposition, ALD)技术在130℃温度下以二乙基锌(DEZ)和硫化氢(H2S)为反应源，在砷化镓(GaAs)衬底表面沉积了ZnS薄膜。用扫描电子显微镜(Scanning Electron Microscope, SEM)分析了样品的表面形貌和膜界面特性，用X射线衍射仪(X-ray Diffraction, XRD)分析了薄膜的结构特性，并通过X射线光电子能谱(X-ray Photoelectron Spectroscopy, XPS)分析了薄膜的化学成分。研究了厚度对薄膜结构和形貌的影响。结果表明，得到的ZnS薄膜为多晶结构，薄膜的厚度随循环数线性增加，速率为1.45 ?/cycle。对在75℃温度下烘烤48 h后的薄膜进行了XPS分析，得出的Zn/S比为1.07:1，表明烘烤除去了薄膜中残存的H2S。以较短生长时间得到的较薄的薄膜具有更好的表面平整度和更致密的结构。

To meet the further requirements of using ZnS thin films in the field of optical films, ZnS thin films were grown on GaAs substrates at 130 ℃ by using DEZn and H2S as reaction sources on the basis of Atomic Layer Deposition(ALD). The surface morphology and interfacial properties of the samples were analyzed by Scanning Electron Microscopy(SEM). The structural properties of the thin films were analyzed by X-ray Diffractometer(XRD)and the chemical compositions of the thin filmswere analyzed by X-ray Photoelectron Spectroscopy(XPS). The effects of thickness on the structure and morphology of the thin films were studied. The results showed that theZnS thin films obtained were polycrystalline. Their thickness increased linearly with the number of cycles at a rate of 1.45 ?/cycle. The XPS analysis of the thin films baked at 75 ℃ for 48 h gave the ratio of Zn/S 1.07:1, which indicated that the residual H2S in the films was removed after baking. The thinner films grown in less time had better surface flatness and denser structure.