介绍了欧美发达国家在高工作温度碲镉汞中波红外探测器上的工艺技术路线及典型产品技术指标。对昆明物理研究所研制的基于标准 n-on-p(Hg空位掺杂)工艺的中波 640×512(15 .m)探测器进行了高工作温度性能测试, 测试结果显示器件性能基本达到国外产品的同期研制水平。

Several kinds of technology roadmap process and technical specifications of typical product for HOT (high operating temperature) HgCdTe MW infrared detector from Euramerican developed countries are reviewed in this paper. A 640×512(15 .m) MW detector that was manufactured by Kunming Institute of Physics based on the standard n-on-p(Hg vacancy doped) process production output was selected for detailed HOT testing. The results prove that the performance of our detector basically reaches the level of foreign products developed in the same period.