The Bowtie aperture structure is widely applied in the realm of nanometer direct-writing lithography for obtaining the focusing spots beyond the diffraction limit. However, the shape of spots obtained is elliptic under the Bowtie structure because the electric field is enhanced and located only in perpendicular to the aperture gap. This characteristic impacts the applications of Bowtie structure. To attain high-resolution and circle-symmetric focusing spots, the double Bowtie structure is proposed. The electric field is enhanced and located in both x and y directions due to the symmetry characteristic of the double Bowtie aperture. The free electrons are accumulated at four tips of the gap of the double Bowtie aperture, which stimulate the localized surface plasmas (LSPs) and develop the double-dipole oscillation mode. This characteristic attributes to obtain circle-symmetry spots and enhance the electric field intensity of transmission light. The simulated results demonstrate that the electric field intensity of transmission light is 22 times than that of incidence. However, the electric field intensity of transmission light decays in the form of exponential with the increasing of the working distance.