光通信研究, 2017 (1): 34, 网络出版: 2017-03-31  

基于ZnMgO/ZnO的紫外波段DFB半导体激光器的仿真分析

Simulation and Analysis of ZnMgO/ZnO Ultraviolet DFB Semiconductor Laser
作者单位
南京邮电大学 光电工程学院, 南京 210046
摘要
根据TMM(传输矩阵理论), 对采用ZnMgO/ZnO为工作物质的紫外波段DFB(分布反馈)半导体激光器的结构进行设计与仿真。当占空比为0.5, 光栅周期为92.5 nm, 光栅高度为65 nm时, 得到了364.8 nm出射波长。通过改变有源层的厚度, 分析了不同有源层厚度时激光器阈值电流与输出功率的关系。仿真结果表明, 有源层太厚会减弱对载流子的限制作用, 使阈值电流增大; 而有源层太薄时, 波导层对光子的限制效果减弱, 导致损耗增大, 功率下降, 阈值电流增大。所以合理选取有源层厚度可改善DFB激光器的电流功率特性。
Abstract
The ZnMgO/ZnO ultraviolet band Distributed Feedback (DFB) semiconductor laser is simulated and designed by using the Transfer Matrix Method (TMM).A peak wavelength of 364.8 nm is obtained when the duty cycle is 0.5, the grating period is 92.5 nm, and the height of the grating is 65 nm. By changing the thickness of active layer, the influence of different active layer thickness on the performance of the laser is analyzed. The numerical simulation results indicate that when increasing the thickness of the active layer, the threshold current is increased as the limitation on the carrier is weakened. When reducing the thickness of the active layer, the limiting effect of the waveguide layer on the photon decreases, which result in a higher threshold current and a lower output power. Therefore, the proper selection of active layer thickness can improve the performance of DFB laser.

沈瑞, 胡芳仁. 基于ZnMgO/ZnO的紫外波段DFB半导体激光器的仿真分析[J]. 光通信研究, 2017, 43(1): 34. SHEN Rui, HU Fang-ren. Simulation and Analysis of ZnMgO/ZnO Ultraviolet DFB Semiconductor Laser[J]. Study On Optical Communications, 2017, 43(1): 34.

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