通过金属有机化学气相淀积(MOCVD)和半导体后工艺技术制备了852 nm半导体激光器, 它在室温下的阈值电流为57.5 mA, 输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明, 当温度变化范围为293~328 K时, 阈值电流的变化速率为0.447 mA/K, 特征温度T0为142.25 K, 输出的光功率变化率为0.63 mW/K。通过计算求得理想因子n为2.11, 激光器热阻为77.7 K/W, 中心波长漂移速率是0.249 29 nm/K, 实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明, 该半导体器件在293~303 K的温度范围内, 各特性参数能够保持相对良好的状态。器件如果工作在高温环境, 需要添加控温设备以保证器件在良好状态下运行。

852 nm semiconductor laser was manufactured by metal organic chemical vapor deposition (MOCVD) and semiconductor subsequent technology. The threshold current of this laser was 57.5 mA, output spectral line width was less than 1 nm at room temperature. The impact of temperature on output optical power, threshold current, voltage, output centre wavelength was analyzed. When the temperature changes from 293 to 328 K, the characteristic temperature is 142.25 K, and the rates of the threshold current change and output light power are 0.447 mA/K and 0.63 mW/K, respectively. Ideal factor n is calculated to be 2.11, while the laser thermal resistance is calculated to be 77.7 K/W. The calculated center wavelength drift rate is 0.249 29 nm/K, corresponding well to the measured value in the experiment. Experimental results demonstrate that the relevant parameters of this laser are stable with the temperature ranging from 293 to 303 K. However, a temperature device is needed if a higher working temperature is required.