光子学报, 2017, 46 (3): 0325002, 网络出版: 2017-04-10  

利用选择性外延法生长单芯片双波长白光InGaN/GaN多量子阱结构

Growth of Single-chip Dual-wavelength White-light InGaN/GaN Multiple Quantum Wells by Using the Selective Epitaxial Growth Method
作者单位
1 无锡职业技术学院 汽车与交通学院, 江苏 无锡 214121
2 江南大学 理学院, 江苏 无锡 214122
摘要
为了制备单芯片无荧光粉白光InGaN/GaN多量子阱发光结构, 利用选择性外延生长法在SiO2条纹掩膜板上生长出具有梯形形貌的GaN微面结构, 并在该GaN微面结构上生长InGaN/GaN多量子阱结构, 最终在单芯片上获得了双波长发光.结果表明: 梯形GaN微面由(0001)和(11-22)面组成, 两者的表面能和极性不同, 并且在InGaN/GaN多量子阱生长过程中,In原子和Ga原子迁移速率不同, 从而使得(0001)和(11-22)面上的多量子阱具有不同的发光波长; 该性质可以使(11-22)面的微面量子阱发出蓝光(峰值波长为420 nm), 而(0001)面的量子阱发出黄光(峰值波长为525 nm), 最终形成双波长的复合白光外延结构.
Abstract
In order to fabricate the phosphor-free InGaN/GaN multiple quantum wells (MQWs) with white light emission, the GaN microfacets with trapezoidal structure were grown using SiO2 stripe mask patterns, and then the InGaN/GaN multiple quantum wells (MQWs) were regrown on the GaN microfacets, forming dual-wavelength emissions in a single chip. The results indicate that, the trapezoidal GaN microfacet is composed of (0001) and (11-22) planes, which is attributed to the differences of surface polarity and surface energy. Also, the different color emissions on (0001) and (11-22) planes are due to the different diffusion rates of In and Ga adatoms; this property allows microfacet MQWs emit blue light (emission peak at 420 nm) from the (11-22) plane and yellow light (emission peak at 525 nm) from the top (0001) plane, the mixing of which leads to the perception of white light emission.

王福学, 叶烜超. 利用选择性外延法生长单芯片双波长白光InGaN/GaN多量子阱结构[J]. 光子学报, 2017, 46(3): 0325002. WANG Fu-xue, YE Xuan-chao. Growth of Single-chip Dual-wavelength White-light InGaN/GaN Multiple Quantum Wells by Using the Selective Epitaxial Growth Method[J]. ACTA PHOTONICA SINICA, 2017, 46(3): 0325002.

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