采用酞菁铁高温裂解法在镀有镍金缓冲层的硅基底上生长了碳纳米管薄膜(Ni/Au-CNT), 并采用二极结构在相同的主Marx电压下研究了其强流脉冲发射稳定性.结果表明: 在脉冲电压峰值为1.60～1.74 MV(对应的脉冲电场峰值为11.43～12.43 V/μm)时, Ni/Au-CNT薄膜首次发射的电流峰值可达331.2A; Ni/Au层不仅能提高CNT薄膜的强流脉冲发射电流峰值, 还能提高其发射稳定性; 当冷阴极重复脉冲发射7次时, Ni/Au-CNT的脉冲电流峰值衰减到初值的72%, 而Ni–CNT和Si-CNT脉冲电流峰值分别衰减到初值的62%和32%.

Carbon Nanotube (CNT) film was grew on a Ni/Au buffered Si wafer by the pyrolysis of iron phthalocyanine(FePc). The intense pulsed emission stability of as-prepared CNT film was studied by measuring the intense pulsed emission characteristics repeatedly with diode configuration under the same voltage of Marx generator. The results show that, at the peak values of pulsed voltage ranging from 1.60 MV to 1.74 MV (the corresponding electric field intensity range of 11.43～12.43 V/μm), the peak current of the first emission cycle reaches to 331.2 A. The Ni/Au composite buffer layer can not only improve the emission current, but also the emission stability of as-prepared CNT film. When the number of emission cycles is up to 7 times for cold cathodes, the current of the Ni/Au-CNT cathode is 72% for the first current point, and while the Ni-CNT cathode and Si-CNT cathode is 62% and 32%, respectively.