发光学报, 2017, 38 (4): 477, 网络出版: 2017-05-03
GaN基肖特基势垒二极管结构优化研究进展
Progress on Structure Optimization of GaN Based Schottky Diode
肖特基势垒二极管(SBD) 外延片 肖特基电极 边缘终端 结构优化 Schottky barrier diode(SBD) epitaxial wafer Schottky electrode edge terminal structure optimization
摘要
作为宽禁带半导体器件, GaN基肖特基势垒二极管(SBD)有耐高压、耐高温、导通电阻小等优良特性, 这使得它在电力电子等领域有广泛应用。本文首先综述了SBD发展要解决的问题; 然后, 介绍了GaN SBD结构、工作原理及结构优化研究进展; 接下来,总结了AlGaN/GaN SBD结构、工作原理及结构优化研究进展, 并着重从AlGaN/GaN SBD的外延片结构、肖特基电极结构以及边缘终端结构等角度, 阐述了这些结构的优化对AlGaN/GaN SBD性能的影响; 最后, 对器件进一步的发展方向进行了展望。
Abstract
As a wide band gap semiconductor device, GaN based Schottky barrier diode (SBD) has the characteristics of high voltage, high thermostability, low conduction resistance and other excellent characteristics, which makes it widely used in the field of power electronics. This paper first summarizes the problems to be solved in the development of SBD. Then, the structure, working principle and structure optimization of GaN SBD are introduced. Next, the structure, working principle and structure optimization of AlGaN/GaN SBD are summarized, and the effects of these structures on the performance of AlGaN/GaN SBDs are discussed from the perspective of epitaxial wafer structure, Schottky electrode structure and edge termination structure of AlGaN/GaN SBD.
吴月芳, 郭伟玲, 陈艳芳, 雷亮. GaN基肖特基势垒二极管结构优化研究进展[J]. 发光学报, 2017, 38(4): 477. WU Yue-fang, GUO Wei-ling, CHEN Yan-fang, LEI Liang. Progress on Structure Optimization of GaN Based Schottky Diode[J]. Chinese Journal of Luminescence, 2017, 38(4): 477.