光电工程, 2017, 44 (3): 356, 网络出版: 2017-06-06  

双发光层结构和双金属电极的绿光微腔OLED

Green OLED based on double metallic mirrors in microcavity structures and double light-emitting structure
作者单位
西安理工大学电子工程系,西安 710048
摘要
制备双金属电极的绿光微腔器件,其结构为Al(15 nm)/MoO3(4 nm)/2T-NATA(10 nm)/NPB(15 nm)/NPB: C545T(x%, 20 nm)/Alq3:C545T(4%, 20 nm)/Bphen(35 nm)/LiF(1 nm)/Al(200 nm),其中x为掺杂浓度。实验表明:当掺杂浓度为3%时,器件有最好的光电性能,记为器件B1。为分析微腔效应,制备基于ITO的参考器件B2。B1和B2色坐标分别为(0.289, 0.620)和(0.317, 0.557),所以微腔器件的发光颜色更绿。在100 mA/cm2时,器件B1和B2的亮度分别为5076 cd/m2和4818 cd/m2,且最大亮度为9277.7 cd/m2,10440 cd/m2;在100 mA/cm2时,器件B1和B2的发光效率为6.0 cd/A和5.61 cd/A,且最大发光效率分别为8.6 cd/A和7.97 cd/A。与参考器件相比,绿光微腔器件具有更好的发光效率和颜色纯度,其主要归因于微腔效应。
Abstract
Green microcavity organic light-emitting diodes (OLEDs) are fabricated by using double metallic mir-rors in microcavity structures and double light-emitting structures. The structure of the device consists of Al(15 nm)/MoO3(4 nm)/2T-NATA(10 nm)/NPB(15 nm)/NPB:C545T(x%, 20 nm)/Alq3:C545T(4%, 20 nm)/Bphen(35 nm)/LiF(1 nm)/Al (200 nm), where x is the doping concentration. When the doping concentration is 3%, the device has the best photoelectric properties, which is named as device B1.The reference device B2 is prepared based on ITO, for the analysis of microcavity effect. B1 and B2 CIE are (0.2889, 0.620) and (0.3168, 0.5571), so the micro-cavity device could emit more green light. At 100 mA/cm2, the brightness of devices B1 and B2 is 5076 cd/m2 and 4818 cd/m2, and the maximum brightness of the both devices are 9277.7 cd/m2 and 10440 cd/m2. At 100 mA/cm2, luminance efficiency of devices B1 and B2 are 6.0 cd/A and 5.61 cd/A, and the luminance efficiency of the both devices are 8.6 cd/A and 7.97 cd/A. Compared with the reference devices, green microcavity device has a higher current efficiency and better color purity, which attributes to the microcavity effect.

安涛, 吴俊宇, 李朋, 杨圣, 丁志明. 双发光层结构和双金属电极的绿光微腔OLED[J]. 光电工程, 2017, 44(3): 356. 安涛, 吴俊宇, 李朋, 杨圣, 丁志明. Green OLED based on double metallic mirrors in microcavity structures and double light-emitting structure[J]. Opto-Electronic Engineering, 2017, 44(3): 356.

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