红外与毫米波学报, 2017, 36 (2): 139, 网络出版: 2017-06-06
简易化学水浴法制备SnO2/p-Si异质结光电性能
Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method
摘要
通过一种简易化学水浴法将SnO2薄膜沉积在晶硅衬底上以制备n-SnO2/p-Si异质结光电器件, 这种自制的化学水浴装置非常便宜和方便.采用XRD、SEM、XPS、PL、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO2薄膜的微结构、光学和电学性能, 对SnO2/p-Si异质结的I-V曲线进行测试并分析, 获得明显的光电转换特性.
Abstract
The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS, PL, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. SnO2/p-Si heterojunction shows a prominent visible-light-driven photoelectrical performance under the low intensity light irradiation. Great photoelectric behavior was also obtained.
何波, 徐静, 宁欢颇, 赵磊, 邢怀中, 张建成, 秦玉明, 张磊. 简易化学水浴法制备SnO2/p-Si异质结光电性能[J]. 红外与毫米波学报, 2017, 36(2): 139. HE Bo, XU Jing, NING Huan-Po, ZHAO Lei, XING Huai-Zhong, CHANG Chien-Cheng, QIN Yu-Ming, ZHANG Lei. Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 139.