中国激光, 2017, 44 (6): 0601004, 网络出版: 2017-06-08
808 nm准连续600 W高功率半导体激光芯片研制 下载: 737次
Development of 808 nm Quasi-Continuous Wave Laser Diode Bar with 600 W Output Power
摘要
通过设计极低损耗808 nm半导体激光芯片外延结构, 实现腔内损耗小于0.5 cm-1。采用该高效率外延结构研制出高峰值功率808 nm巴条芯片, 巴条的填充因子为85%, 包含60个发光点, 发光区宽度为140 μm, 腔长为2 mm。在驱动电流为500 A, 脉冲宽度为200 μs, 重复频率为400 Hz, 占空比为8%的工作条件下, 该芯片的准连续(QCW)峰值输出功率为613 W, 斜率效率达1.34 W/A,峰值波长为807.46 nm, 光谱半峰全宽为2.88 nm。任意选取5只芯片, 在准连续300 W(占空比8%)条件下进行了寿命验证, 芯片寿命达到3.63×109 shot, 定功率300 W下电流变化小于10%, 达到商业化水平。
Abstract
Design of 808 nm epitaxial layer structure is demonstrated, and a very low internal loss less than 0.5 cm-1 is achieved. The quasi-continuous wave (QCW) high peak power 808 nm laser bar is fabricated with this high efficiency wafer. The bar with a filled factor of 85%, emitter number of 60, emitting width of 140 μm, and cavity length of 2 mm is measured at QCW mode. The peak power is 613 W with a slope efficiency of 1.34 W/A (drive current of 500 A, pulse width of 200 μs, repetition frequency of 400 Hz, duty ratio of 8%). The peak wavelength is about 807.46 nm with a spectral half-width full-maximum of 2.88 nm. The lifetime test is also demonstrated at QCW 300 W (8% duty ratio), the lifetime of five bars is all above 3.63×109 shot, the current fluctuation is lower than 10% at the constant power of 300 W, which satisfies commercial application requirement.
王贞福, 李特, 杨国文, 宋云菲. 808 nm准连续600 W高功率半导体激光芯片研制[J]. 中国激光, 2017, 44(6): 0601004. Wang Zhenfu, Li Te, Yang Guowen, Song Yunfei. Development of 808 nm Quasi-Continuous Wave Laser Diode Bar with 600 W Output Power[J]. Chinese Journal of Lasers, 2017, 44(6): 0601004.