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Broad-area laser diodes with on-chip combined angled cavity

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Abstract

Broad-area diode lasers usually supply high output power but low lateral beam quality. In this Letter, an on-chip combined angled cavity is proposed to realize narrow lateral far field patterns and high brightness. The influence of included angles, emitting facets on output power, and beam quality are investigated. It demonstrates that this V-junction laser is able to achieve a single-lobe far field at optimal cavity length with a 3.4 times improvement in brightness compared with Fabry–Perot (F-P) cavity lasers. The excited high-order modes at a high injection level reduce the brightness, but it is still 107% higher than that of F-P lasers.<录用日期>2017-05-18<上网时间>2017-06-06

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DOI:10.3788/col201715.081402

所属栏目:Lasers and laser optics

基金项目:This work was supported by the National Natural Science Foundation of China (Nos. 61404138 and 61474119), the National Basic Research Program of China (No. 2013CB933303), the International Science Technology Cooperation Program of the Chinese Academy of Sciences (No. 181722KYSB20160005), the International Science Technology Cooperation Program of China (No. 2013DFR00730), the Jilin Provincial Natural Science Foundation (Nos. 20160101243JC and 20150520105JH), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (No. IOSKL2016KF15).

收稿日期:2017-03-14

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Zefeng Lu:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, China
Lijie Wang:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Zhide Zhao:Suzhou Everbright Photonics Co., Ltd, Suzhou 215000, China
Shili Shu:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Guanyu Hou:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, China
Huanyu Lu:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, China
Sicong Tian:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Cunzhu Tong:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Lijun Wang:State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

联系人作者:tongcz@ciomp.ac.cn;

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引用该论文

Zefeng Lu, Lijie Wang, Zhide Zhao, Shili Shu, Guanyu Hou, Huanyu Lu, Sicong Tian, Cunzhu Tong, Lijun Wang, "Broad-area laser diodes with on-chip combined angled cavity," Chinese Optics Letters 15(8), 081402 (2017)

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