基于开口谐振环结构设计了多频带太赫兹波调制器, 并在谐振环的开口处及两侧均填充温敏介质锑化铟(InSb), 研究了锑化铟的电磁性质随温度的变化、 等效电感的组数对共振频带数目的影响以及锑化铟不同的填充方式对太赫兹波调制特性随温度的变化规律。 研究结果表明, 当环境温度从160 K上升到350 K时, 锑化铟的载流子浓度和等离子体频率逐渐增大, 然而等效介电常数却不断减小; 每增加一组等效电感, 太赫兹波调制器都会相应的增加一个共振频带; 在调制器开口处和两侧均填充锑化铟时, 当环境温度在160～350 K变化时, 温度对太赫兹波的共振频率和共振幅度的调制效果比仅在开口处或者两侧填充锑化铟时更明显, 且随着温度的升高, 每个共振频带所对应的共振频率均明显增大。

Based on metallic split- ring resonator, the thermally tunable multi- bands terahertz wave modulator has been designed, while the thermosensitive indium antimonide (InSb) has been further embedded in the gap and the side of the split- ring resonator. On the basis, the variation of the electromagnetic properties of indium antimonide with the temperature has been studied first, and then the influence of the number of the equivalent inductance on the number of resonance frequency has been investiagated. Meanwhile, the variation of the modulation characteristics of the terahertz wave with different embedded ways has also been discussed quantitatively. The results show that the intrinsic carrier density and the plasma frequency of indium antimonide both increase with the increasing of the temperature from 160 to 350 K, while the effective permittivity decreases with the increasing of the temperature. According to the relationship between the resonance frequency and the effective permittivity, the resonance frequency of the modulator can be tuned by varying the temperature. Furthermore, there are two resonance bands for the presence of one equivalent inductance, and five resonance bands can further be achieved when the equivalent inductance further increases to four. Hence, the number of the resonance band increases with the increasing of the number of the equivalent inductance. For the two equivalent inductance modulator embedded by indium antimonide only in the side of the split- ring resonator, the modulation of resonance frequency and resonance amplitude is not obvious with the increasing of the temperature from 160 to 350 K, whereas the first resonance frequency increases significantly and the second resonance band disappears gradually with the increasing of the temperature for the case of the modulator embedded by indium antimonide only in the gap of the split- ring resonator. However, the modulation effects of the resonance frequency and the resonance amplitude of the terahertz wave become obviously with the increasing of the temperature from 160 to 350 K when the indium antimonide is embedded both in the gap and the side of the split- ring resonator. The resonance frequency of the different resonance bands increases evidently with the increasing of the temperature. The transmission magnitude of the first resonance frequency increases at first before decreasing with the increasing of the temperature while the others increase with the increasing of the temperature. Consequently, the thermally tunable multi- band terahertz metamaterial can be applied to multi- bands filter or other frequency selective terahertz device.