采用真空热阻蒸方式在CMOS图像传感器感光面上镀制不同厚度性比价高的Lumogen薄膜.研究发现不同Lumogen薄膜厚度的CMOS传感器的暗电流噪声未发生明显变化，说明真空热蒸发方式对互补金属氧化物半导体器件本身未造成热损伤; 光响应非均匀度随膜厚增加而增大; 动态范围却随膜厚增加而减小; 量子效率随膜厚增加呈现先增大后减小.同时，研究发现敏化膜层最佳厚度为389 nm，此时CMOS传感器的量子效率提高了10%，且光响应非均匀度，动态范围均在相对较好的范围内.

The Lumogen as a low-cost organic material is deposited on the surface of the CMOS imaging sensor using a vacuum thermal evaporation system. The constant dark current noise of the CMOS is shown that no damage to the CMOS is caused in the process of the depositing film. The photo response nonuniformity is increased while the dynamic range is decreased with the argument of the Lumogen-film thickness. Furthermore, the quantum efficiency is increased firstly and then decreased and reach to the optimum 10% when the thickness of the Lumogen film is 389 nm. Meanwhile, the photo response nonuniformity and dynamic range are in a relatively good condition.