首页 > 论文 > 发光学报 > 38卷 > 6期(pp:753-759)

6H-SiC衬底上AlGaN基垂直结构紫外LED的制备

Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

利用金属有机物化学气相沉积方法, 在n型6H-SiC衬底上制备了15对Si掺杂Al0.19Ga0.81N/Al0.37Ga0.63N DBR, 并采用低温AlN缓冲层有效抑制了DBR结构中裂纹的产生, 得到了表面均方根粗糙度仅为0.4 nm且导电性能良好的n型DBR, 其在369 nm处峰值反射率为68%, 阻带宽度为10 nm。在获得导电DBR的基础上, 进一步在n型6H-SiC衬底上构建了有、无DBR的垂直结构紫外LED。对比两者电致发光光谱, 发现DBR结构的引入有效增强了LED紫外发光强度。

Abstract

Silicon-doped Al0.19Ga0.81N/Al0.37Ga0.63N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition(MOCVD). To suppress the generation of cracks, a low-temperature AlN pre-deposition layer on 6H-SiC(0001) substrate was used as buffer. A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained. The stop-band bandwidth and RMS value of DBR are 10 nm and 0.4 nm, respectively. Furthermore, the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated. By comparing EL spectra, it is shown that the introduction of DBR structure can effectively improve the UV emission.

中国激光微信矩阵
补充资料

中图分类号:TN383;TH691.9

DOI:10.3788/fgxb20173806.0753

所属栏目:器件制备及器件物理

基金项目:国家重点研发计划(2016YFB0400103); 吉林省科技发展计划(20130204032GX,20150519004JH,20160101309JC); 教育部新世纪人才计划(NCET13-0254)资助项目

收稿日期:2017-01-03

修改稿日期:2017-02-19

网络出版日期:--

作者单位    点击查看

刘明哲:吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室, 吉林 长春 130012
李鹏翀:吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室, 吉林 长春 130012
邓高强:吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室, 吉林 长春 130012
张源涛:吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室, 吉林 长春 130012
张宝林:吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室, 吉林 长春 130012

联系人作者:刘明哲(mingzhe_liu@foxmail.com)

备注:刘明哲 (1991-), 男, 山东淄博人, 硕士研究生, 2014年于吉林大学获得学士学位, 主要从事基于Ⅲ族氮化物材料的紫外LED的研究。

【1】KHAN A, BALAKRISHNAN K, KATONA T. Ultraviolet light-emitting diodes based on group three nitrides [J]. Nat. Photon., 2008, 2(2): 77-84.

【2】MOUDAKIR T, GAUTIER S, SURESH S,et al.. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE [J]. J. Cryst. Growth, 2013, 370: 12-15.

【3】王军喜, 闫建昌, 郭亚楠, 等. 氮化物深紫外LED研究新进展 [J]. 中国科学: 物理学 力学 天文学, 2015, 45(6): 067303-1-20.
WANG J X, YAN J C, GUO Y N,et al.. Recent progress of research on III-nitride deep ultraviolet light-emitting diode [J]. Sci. Sinica Phys. Mech. Astron., 2015, 45(6): 067303-1-20. (in Chinese)

【4】陈航洋, 刘达艺, 李金钗, 等. 高Al组分Ⅲ族氮化物结构材料及其在深紫外LED应用的进展 [J]. 物理学进展, 2013, 33(2): 43-56.
CHEN H Y, LIU D Y, LI J C, et al.. Development of high Al content structural III nitrides and their applications in deep UV-LED [J]. Prog. Phys., 2013, 33(2): 43-56. (in Chinese)

【5】LIU X T, LI D B, SUN X J,et al.. Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN [J]. Cryst Eng Comm, 2014, 16(34): 8058-8063.

【6】路慧敏, 陈根祥. 极化效应对InGaN/GaN多量子阱结构光电特性的影响 [J]. 发光学报, 2011, 32(3): 266-271.
LU H M, CHEN G X. Influence of polarization effect on optoelectronic properties of InGaN/GaN multiple quantum well [J]. Chin. J. Lumin., 2011, 32(3): 266-271. (in Chinese)

【7】LI J M, LIU Z, LIU Z Q, et al.. Advances and prospects in nitrides based light-emitting-diodes [J]. J. Semicond., 2016, 37(6): 061001-1-14.

【8】HUANG Z, ZHANG Y T, ZHAO B J, et al.. Effects of AlN buffer on the physical properties of GaN films grown on 6H-SiC substrates [J]. J. Mater. Sci.: Mater. Electron., 2016, 27(2): 1738-1744.

【9】GUO H, ZHAO Y Q, ZHANG Y M, et al.. Influence of n-type doping on the oxidation rate in n-type 6H-SiC [J]. J. Semicond., 2015, 36(1): 013006-1-5.

【10】ADIVARAHAN V, HEIDARI A, ZHANG B. Vertical injection thin film deep ultraviolet light emitting diodes with AlGaN multiple-quantum wells active region [J]. Appl. Phys. Express, 2009, 2(9): 092102.

【11】SHI ZH F, XIA X C, YIN W, et al.. Dominant ultraviolet electroluminescence from p-ZnO∶as/n-SiC(6H) heterojunction light-emitting diodes [J]. Appl. Phys. Lett., 2012, 100(10): 101112-1-4.

【12】CANTU P, WU F, WALTEREIT P, et al.. Role of inclined threading dislocations in stress relaxation in mismatched layers [J]. J. Appl. Phys., 2005, 97(10): 103534-1-10.

【13】ACORD J D, MANNING I C, WENG X J, et al.. In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN∶Si thin films [J]. Appl. Phys. Lett., 2008, 93(11): 111910-1-3.

【14】MANNING I C, WENG X, ACORD J D, et al.. Tensile stress generation and dislocation reduction in Si-doped AlxGa1-xN films [J]. J. Appl. Phys., 2009, 106(2): 023506-1-7.

【15】HUANG G S, LU T C, YAO H H, et al.. Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 2006, 88(6): 061904-1-3.

【16】TAO P C, LIANG H W, WANG D S, et al.. Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition [J]. Mater. Sci. Semicond. Process., 2014, 27: 841-845.

【17】WANG D S, LIANG H W, TAO P C,et al.. Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC (0001) [J]. Superl. Microstruct., 2014, 70: 54-60.

【18】LIU Y S, HAQ A F M S, KAO T T, et al.. Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition [J]. J. Cryst. Growth, 2016, 443: 81-84.

【19】IKEYAMA K, KOZUKA Y, MATSUI K,et al.. Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors [J]. Appl. Phys. Express, 2016, 9(10): 102101-1-4.

【20】宿世臣, 吕有明. ZnMgO/n-ZnO/ZnMgO/p-GaN异质结LED的紫外电致发光 [J]. 发光学报, 2011, 32(8): 821-824.
SU S C, LV Y M. Ultraviolet electroluminescence of ZnMgO/n-ZnO/ZnMgO/p-GaN heterojunction light emitting diode [J]. Chin. J. Lumin., 2011, 32(8): 821-824. (in Chinese)

【21】KARPOV S Y, MAKAROV Y N. Dislocation effect on light emission efficiency in gallium nitride [J]. Appl. Phys. Lett., 2002, 81(25): 4721-4723.

【22】KNEISSL M, KOLBE T, CHUA C, et al.. Advances in group III-nitride-based deep UV light-emitting diode technology [J]. Semicond. Sci. Technol., 2011, 26(1): 014036-1-6.

【23】IM J S, MORITZ A, STEUBER F, et al.. Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN [J]. Appl. Phys. Lett., 1997, 70(5): 631-633.

引用该论文

LIU Ming-zhe,LI Peng-chong,DENG Gao-qiang,ZHANG Yuan-tao,ZHANG Bao-lin. Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate[J]. Chinese Journal of Luminescence, 2017, 38(6): 753-759

刘明哲,李鹏翀,邓高强,张源涛,张宝林. 6H-SiC衬底上AlGaN基垂直结构紫外LED的制备[J]. 发光学报, 2017, 38(6): 753-759

被引情况

【1】文如莲,胡晓龙,高 升,梁思炜,王 洪. 基于金属掺杂ITO透明导电层的紫外LED制备. 发光学报, 2018, 39(12): 1735-1742

【2】余恒炜,孙晓娟,王星辰,蒋 科,吴 忧,程东碧,石芝铭,贾玉萍,黎大兵. 量子随机数高斯噪声信号发生器. 光学 精密工程, 2019, 27(7): 1492-1499

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF