开展了变焦彩色CCD成像系统的激光外场干扰实验, 测得了半导体激光(750 nm)对变焦距(17~187 mm)彩色CCD相机的干扰效果; 同时利用典型的激光干扰CCD模型, 完成了对实验结果的验证与理论分析。理论与实验结果表明: 750 nm激光对彩色CCD成像系统的干扰效果明显, CCD靶面出现了明显的光饱和和串扰现象; 在激光辐照条件相同情况下, 光学系统焦距f越大, 被光阑截断的激光就越少, 到靶的激光功率密度就越高, CCD靶面的光饱和面积就越大; 光学系统焦距f为17 mm时, CCD靶面的光饱和面积为0.33 mm×0.29 mm, 而当光学系统焦距f增大至120 mm时, CCD靶面的光饱和面积为1.8 mm×1.2 mm。仿真结果与实验结果基本一致, 证明了理论模型的正确性。研究结果将对CCD器件的实际应用具有一定的指导意义。

Out-field laser jamming experiment of varifocal colour CCD imaging system irradiated by semiconductor laser was done. Laser jamming effects of colour CCD imaging system with different focal lengths were measured. Laser jamming model was set-up, and theoretical proving and analysis on experimental results were completed. Theorical and experimental results show that laser jamming effect of colour CCD imaging system irradiated by 750 nm laser is obvious, and CCD surface appears obvious light saturation and crosstalk phenomena. In the same initial laser irradiating conduction, laser power truncated by the aperture gradually decreases with increase of focal length f, and light saturation area on the CCD surface gradually increases. When focal length f of colour CCD imaging system is 17 mm, light saturation area on the CCD surface is 0.33 mm×0.29 mm. While focal length f of colour CCD imaging system increases to 120 mm, light saturation area on the CCD surface is 1.8 mm×1.2 mm. Simulation results are coincident with experimental results, and it proves laser jamming model is correct. The conclusions have a reference value for colour CCD in the practical application.