激光与光电子学进展, 2017, 54 (8): 080401, 网络出版: 2017-08-02
叉指背接触晶硅太阳电池背面掺杂区和金属电极图形结构的优化 
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Optimization of Doped Region and Metal Electrode Patterned Structure on Rear Side of Interdigitated Back Contact Crystalline Silicon Solar Cell
探测器 硅太阳能电池 叉指背接触 图形化结构 能量损失 性能优化 电流空间分布 detectors silicon solar cells interdigitated back contact patterned structure energy loss performance optimization spatial distribution of current
摘要
通过数值模拟对叉指背接触(IBC)晶硅太阳电池的结构参数进行了系统研究, 详细分析了硅片厚度, 电池背面发射区、隔离区、背表面场的面积比以及发射区金属接触线的分布和线宽对电池开路电压、短路电流密度、填充因子和电池转换效率的影响。结果表明：增大发射区面积占比、减小金属接触线的线宽均有利于提高电池转换效率；当电池硅片厚度为220 μm, 背面发射区、隔离区和背表面场的面积比为8∶1∶1, 且发射区的2个金属接触线总线宽为10 μm时, IBC电池的光电转换效率最优值为24.19%。
Abstract
Structural parameters of interdigitated back contact (IBC) crystalline silicon solar cell are investigated systematically by numerical simulation. The influences of the Si wafer thickness, the area ratio of emitter, gap and back surface field, and the distribution and linewidth of metal contact lines in emitting region on the open-circuit voltage, short-circuit current density, filling factor and conversion efficiency of solar cell are analyzed in detail. Results show that the conversion efficiency of solar cell increases with the increasing of area ratio and the decreasing of metal contact′s linewidth. When the bulk thickness of Si is 220 μm, the area ratio of emitting region, gap and back surface field is 8∶1∶1, the total linewidth of two metal contact lines in emitting region is 10 μm, and an optimum photoelectric conversion efficiency of 24.19% can be achieved for IBC solar cell.
胡凡, 曹双迎, 殷敏, 陈小源, 李东栋. 叉指背接触晶硅太阳电池背面掺杂区和金属电极图形结构的优化[J]. 激光与光电子学进展, 2017, 54(8): 080401. Hu Fan, Cao Shuangying, Yin Min, Chen Xiaoyuan, Li Dongdong. Optimization of Doped Region and Metal Electrode Patterned Structure on Rear Side of Interdigitated Back Contact Crystalline Silicon Solar Cell[J]. Laser & Optoelectronics Progress, 2017, 54(8): 080401.
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