HIT结构的a-Si∶H/c-Si异质结太阳能电池迎光面遮光损失大是限制其效率提升的瓶颈之一。设计并制备了银栅线/SiNx/c-Si(n+)/n-c-Si/a-Si∶H(i)/a-Si∶H(p+)/ITO/银栅线结构的双面太阳能电池。对制备的双面太阳能电池样品每一面的进光情况进行J-V、量子效率和Suns-Voc测试分析。研究结果表明, 该结构太阳能电池采用背结结构入光可获得比前结结构入光更高的短路电流密度, 从而获得更高的光电转换效率；当制绒后硅片厚度为160 μm时, 双面太阳能电池的短路电流密度最高, 为40.3 mA·cm-2, 优于HIT结构的最优值39.5 mA·cm-2 。

The parasitic absorption loss in the light-injection side of HIT (heterojunction with intrinsic thin layer) structured a-Si∶H/c-Si solar cell is one of the bottlenecks to limit transfer efficiency improvement of HIT cells. A kind of bi-facial solar cell with a structure of Ag grid/SiNx/c-Si(n+)/n-c-Si/a-Si∶H(i)/a-Si∶H(p+)/ITO/Ag grid is designed and prepared. The properties of the solar cell samples with light coming from each side are analyzed by means of J-V characteristics, quantum efficiency and Suns-Voc measurement methods. The results show that higher short-circuit current density of the cells can be obtained with rear-junction installation than that with a front-junction installation, which is the reason for higher conversion efficiency with rear-junction installation. In the research, the maximum short-circuit current density of 40.3 mA·cm-2 is got in a cell with wafer thickness of 160 μm, which is higher than the maximum value of the short-circuit current density of 39.5 mA·cm-2 for the HIT cells.