为了减小场发射的屏蔽效应, 采用图形化技术对氧化锌(ZnO)纳米枝阵列进行调控, 并研究图形化ZnO枝阵列的性能。首先采用光刻法在ITO导电玻璃上制备图形化ZnO种子层, 再用电沉积法在图形化种子层上生长ZnO纳米枝阵列。利用扫描电子显微镜(SEM)、X射线衍射(XRD)研究所制备的图形化ZnO阵列形貌、结构等, 并测试其场发射性能。研究结果表明, 制备的图形化ZnO纳米枝是圆阵列, 直径为330 μm左右, 纳米ZnO主干平均直径为400~500 nm, 发现主干上有一些精细的类似锥状的纳米量级微细枝结构, 并且具有良好的场发射性能, 开启场强为2.15V/μm, 场增强因子为16 109。该图形化生长ZnO阵列阴极的方法是一种能较好改善材料场发射性能的方法, 在场发射应用领域表现出较好的前景。

In order to reduce field shield effect, zinc oxide (ZnO) dendritic structures were controlled by pattern technology and their properties were studied. Firstly, patterned zinc oxide (ZnO) thin films were prepared by the use of photolithography on the ITO glass substrate. Patterned dendritic ZnO arrays were successfully synthesized on the ITO covered with patterned ZnO thin film by using a simply electrodeposition approach. Then, the morphology and structure characteristics of as-prepared ZnO nanostructures were characterized by scanning electron microscopy and X-ray diffraction, respectively. Moreover, field emission properties of pattern ZnO arrays were also explored. The results show that the patterned ZnO arrays are circular arrays with the diameter of 330 μm, the diameter of average ZnO trunks are 400~500 nm. There are many nametapes on the ZnO trunks. They exhibit good field emission properties with a turn-on field of 2.15 V/μm and a field enhancement factor of 16 109. The patterned ZnO array is a feasible method for improving field emission properties.