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Unidirectional lasing in semiconductor microring lasers at an exceptional point [Invited]

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Abstract

Recent experiments demonstrated that chiral symmetry breaking at an exceptional point (EP) is a viable route to achieve unidirectional laser emission in microring lasers. By a detailed semiconductor laser rate equation model, we show here that unidirectional laser emission at an EP is a robust regime. Slight deviations from the EP condition can break preferential unidirectional lasing near threshold via a Hopf instability. However, above a “second” laser threshold, unidirectional emission is restored.

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DOI:10.1364/prj.5.0000b1

基金项目:National Science Foundation (NSF)10.13039/100000001 (DMR-1506884); Army Research Office (ARO)10.13039/100000183 (W911NF-15-1-0152).

收稿日期:2017-05-19

录用日期:2017-06-21

网络出版日期:2017-06-23

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Stefano Longhi:Dipartimento di Fisica, Politecnico di Milano and Istituto di Fotonica e Nanotecnologie del Consiglio Nazionale delle Ricerche, Piazza L. da Vinci 32, I-20133 Milano, Italy
Liang Feng:Department of Electrical Engineering, The State University of New York at Buffalo, Buffalo, New York 14260, USA

联系人作者:Stefano Longhi(longhi@fisi.polimi.it)

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引用该论文

Stefano Longhi and Liang Feng, "Unidirectional lasing in semiconductor microring lasers at an exceptional point [Invited]," Photonics Research 5(6), B1 (2017)

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