Photonics Research, 2017, 5 (6): 060000B1, Published Online: Aug. 15, 2017   

Unidirectional lasing in semiconductor microring lasers at an exceptional point [Invited] Download: 834次

Author Affiliations
1 Dipartimento di Fisica, Politecnico di Milano and Istituto di Fotonica e Nanotecnologie del Consiglio Nazionale delle Ricerche, Piazza L. da Vinci 32, I-20133 Milano, Italy
2 Department of Electrical Engineering, The State University of New York at Buffalo, Buffalo, New York 14260, USA
Abstract
Recent experiments demonstrated that chiral symmetry breaking at an exceptional point (EP) is a viable route to achieve unidirectional laser emission in microring lasers. By a detailed semiconductor laser rate equation model, we show here that unidirectional laser emission at an EP is a robust regime. Slight deviations from the EP condition can break preferential unidirectional lasing near threshold via a Hopf instability. However, above a “second” laser threshold, unidirectional emission is restored.

Stefano Longhi, Liang Feng. Unidirectional lasing in semiconductor microring lasers at an exceptional point [Invited][J]. Photonics Research, 2017, 5(6): 060000B1.

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