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532 nm平顶激光光束用于硅晶圆开槽的研究

Study on 532-nm Flattened Laser Beam for Silicon Wafer Grooving

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摘要

根据衍射原理,设计并制备了平顶整形元件, 将激光能量由高斯分布转变为平顶分布。利用532 nm脉冲激光进行了硅晶圆激光划片实验, 研究了激光能量、划片速度及聚焦位置对划片效果的影响。结果表明, 基于平顶光束的激光划片, 可实现宽约为16 μm、深约为18 μm的划槽, 且槽底部平坦, 槽壁陡直; 与高斯光束相比, 平顶光束下热影响区明显减小。

Abstract

According to the diffraction principle, a flattened shaping element is designed and prepared, which converts a Gaussian distribution of laser energy to a flat-top distribution. The laser dicing test of silicon wafers is carried out by using the 532 nm pulsed laser and the influences of laser energy, dicing speed and focusing position on the wafer cutting effect are investigated. The results show that based on the laser dicing by flattened beams, a groove with a width of about 16 μm and a depth of about 18 μm can be obtained, whose bottom is flat and wall is steep. In addition, the heat affected zone under the flattened beam is obviously smaller than that under the Gaussian beam.

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中图分类号:TN249

DOI:10.3788/lop54.091407

所属栏目:激光器与激光光学

基金项目:国家自然科学基金(61376083)、中国科学院装备研制项目、广西自然科学基金(2016GXNSFDA380021)

收稿日期:2017-03-23

修改稿日期:2017-05-04

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李海鸥:桂林电子科技大学广西精密导航技术与应用重点实验室, 广西 桂林 541004
韦春荣:桂林电子科技大学广西精密导航技术与应用重点实验室, 广西 桂林 541004
王晓峰:中国科学院微电子研究所微电子设备技术研究室, 北京 100029中国科学院半导体研究所半导体集成技术工程中心, 北京 100083
张紫辰:中国科学院微电子研究所微电子设备技术研究室, 北京 100029清华大学精密仪器系微纳制造器件与系统协同创新中心精密测试技术及仪器国家重点实验室, 北京 100084
潘岭峰:中国科学院微电子研究所微电子设备技术研究室, 北京 100029

联系人作者:李海鸥(seagull_1228@hotmail.com)

备注:李海鸥(1974-), 男, 博士, 教授, 主要从事微波集成电路、功率器件方面的研究。

【1】Shi K W, Yow K Y, Lo C. Single & multi beam laser grooving process parameter development and die strength characterization for 40 nm node low-K/ULK wafer[C]. Electronics Packaging Technology Conference IEEE, 2014: 752-759.

【2】Hsu H C, Chu L M, Liu B, et al. An investigation on dicing 28-nm node Cu/low-k wafer with a picosecond pulse laser[J]. Journal of the Microelectronics and Packaging Society, 2014, 21(4): 63-68.

【3】Mai T A, Housh R, Brulé A, et al. Dicing of high-power white LEDs in heat sinks with the water jet-guided laser[C]. SPIE, 2007, 6486: 64860A.

【4】Fujita M, Nakata Y, Miyanaga N, et al. Low-stress dicing assisted by pulsed laser for multilayer MEMS[C]. SPIE, 2009, 7202: 72020F.

【5】Sun Zhilong, Cai Zhixiang, Yang Wei. Laser cutting and scribing of 96% alumina ceramic substrate and parameter optimization[J]. Laser & Optoelectronics Progress, 2015, 52(10): 101404.
孙智龙, 蔡志祥, 杨 伟. 96%氧化铝陶瓷基板的激光切割划片及工艺优化[J]. 激光与光电子学进展, 2015, 52(10): 101404.

【6】Dushkina N M, Wagner F R, Boillat C, et al. Water jet guided laser versus saw dicing[C]. SPIE, 2003, 4977: 75-85.

【7】Sibailly O, Richerzhagen B. Laser dicing of silicon and composite semiconductor materials[C]. SPIE, 2004, 5339: 394-397.

【8】Lin Zhe, Ye Xiaohui, Han Jinpeng, et al. Patterning of graphene by femtosecond laser cutting[J]. Chinese J Lasers, 2015, 42(7): 0703002.
林 喆, 叶晓慧, 韩金鹏, 等. 基于飞秒激光切割的石墨烯图案化研究[J]. 中国激光, 2015, 42(7): 0703002.

【9】Fornaroli C, Holtkamp J, Gillner A. Dicing of thin Si wafers with a picosecond laser ablation process[J]. Physics Procedia, 2013, 41: 603-609.

【10】Gecys P, Raciukaitis G, Wehrmann A, et al. Scribing of thin-film solar cells with picosecond and femtosecond lasers[J]. Journal of Laser Micro/Nanoengineering, 2012, 7(1): 33-37.

【11】Wang Dawei, Gao Xifeng. Study on kerf roughness differences between line and arc analysis and elimination of laser precision cutting[J]. Chinese J Lasers, 2015, 42(3): 0303005.
王大伟, 高席丰. 激光精密切割圆弧和直线粗糙度差异分析与消除[J]. 中国激光, 2015, 42(3): 0303005.

【12】Hiroshi M. Wafer separating method: TW97109079[P]. 2008-12-01.

【13】Yosuke W, Ryugo O, Masaru N. Wafer dividing method: TW98108917[P]. 2009-12-01.

【14】Borkulo J V, Hendriks R, Dijkstra P. Comparison between single & multi beam laser grooving of low-K layers[J]. International Symposium on Microelectronics, 2012, 1: 433-439.

【15】Borkulo J V, Alsi R H, Netherlands B. Multi beam grooving and full cut laser dicing of IC wafers[J]. ECS Transactions, 2012, 44(1): 969-974.

【16】Morris J H, Powers M, Rieger H. Method and apparatus for laser ablation of a target material: US6717101[P]. 2004-04-06.

【17】Bovatsek J M, Patel R S. Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355 nm Q-switched laser source using line-focus fluence optimization technique[C]. SPIE, 2010, 7585: 75850K.

【18】Bischoff C, Jger E, Umhofer U. Beam shaping optics for process acceleration[J]. Laser Technik Journal, 2015, 12(3): 53-57.

引用该论文

Li Haiou,Wei Chunrong,Wang Xiaofeng,Zhang Zichen,Pan Lingfeng. Study on 532-nm Flattened Laser Beam for Silicon Wafer Grooving[J]. Laser & Optoelectronics Progress, 2017, 54(9): 091407

李海鸥,韦春荣,王晓峰,张紫辰,潘岭峰. 532 nm平顶激光光束用于硅晶圆开槽的研究[J]. 激光与光电子学进展, 2017, 54(9): 091407

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