光电子快报(英文版), 2014, 10 (3): 202, Published Online: Oct. 12, 2017   

Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power

Author Affiliations
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic,Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin 300071, China
Abstract
Hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously. Additionally, the microstructural properties of the μc-SiGe:H films are also studied. By combining Raman, Fourier transform infrared (FTIR) and X-ray fluoroscopy (XRF) measurements, it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.

LI Tian-wei, ZHANG Jian-jun, CAO Yu, HUANG Zhen-hua, MA Jun, NI Jian, ZHAO Ying. Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power[J]. 光电子快报(英文版), 2014, 10(3): 202.

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