光电子快报(英文版), 2014, 10 (3): 202, Published Online: Oct. 12, 2017
Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power
Abstract
Hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously. Additionally, the microstructural properties of the μc-SiGe:H films are also studied. By combining Raman, Fourier transform infrared (FTIR) and X-ray fluoroscopy (XRF) measurements, it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.
LI Tian-wei, ZHANG Jian-jun, CAO Yu, HUANG Zhen-hua, MA Jun, NI Jian, ZHAO Ying. Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power[J]. 光电子快报(英文版), 2014, 10(3): 202.