光电子快报(英文版), 2014, 10 (3): 213, Published Online: Oct. 12, 2017   

Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

Author Affiliations
1 Chengyi College, Jimei University, Xiamen 361021, China
2 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Abstract
The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum (FWHM) is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity light emitting devices.

CHEN Li-qun, CHEN Yang-hua, LI Cheng. Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate[J]. 光电子快报(英文版), 2014, 10(3): 213.

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