Abstract

In order to improve the quality of detector, InxGa1-xAs (x=0.82) buffer layer has been introduced in In_0.82Ga_0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in InxGa1-xAs (x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

补充资料

DOI：10.1007/s11801-016-5272-6

基金项目：This work has been supported by the National Natural Science Foundation of China (No.61474053), and the 2014 Natural Science Basic Research Open Foundation of the Key Lab. of Automobile Materials, Ministry of Education, Jilin University (No.1018320144001).

收稿日期：2015-12-24

修改稿日期：--

网络出版日期：--

作者单位    点击查看

联系人作者：ZHAO Lei(zljolly@jlu.edu.cn)

【1】F. Zheng, G. Zhu, X.F. Liu, C. Wang, Z.B. Sun and G.J. Zhai, Optoelectronics Letters 11, 121 (2015).

【2】L. Avakyants, P.Y. Bokov, T. Kolmakova and A. Chervyako, Semiconductors 38, 1384 (2004).

【3】X. Jin, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka and Y. Takeda, Journal of Crystal Growth 353, 84 (2012).

【4】L.S. Liu, Optoelectronics Letters 6, 191 (2010).

【5】J.F. Geisz, S. Kurtz, M.W. Wanlass, J.S. Ward, A. Duda, D.J. Friedman, J.M. Olson, W.E. McMahon, T.E. Moriarty and J.T. Kiehl, Applied Physics Letters 91, 023502 (2007).

【6】L. Avakyants, P.Y. Bokov, G. Galiev, V. Kaminskii, V. Kul’bachinskii, V. Mokerov and A. Chervyakov, Optics and Spectroscopy 93, 857 (2002).

【7】M. Hostut, M. Alyoruk, T. Tansel, A. Kilic, R. Turan, A. Aydinli and Y. Ergun, Superlattices and Microstructures 79, 116 (2015).

【8】N. Tounsi, M.M. Habchi, Z. Chine, A. Rebey and B. El Jani, Superlattices and Microstructures 59, 133 (2013).

【9】T. Zhang, G. Miao, Y. Jin, H. Jiang, Z. Li and H. Song, Journal of Alloys and Compounds 458, 363 (2008).

【10】K. Oe, Journal of Crystal Growth 219, 10 (2000).

【11】S. Wang, W. Wang, H. Zhu, L. Zhao, R. Zhang, F. Zhou, H. Shu and R. Wang, Journal of Crystal Growth 260, 464 (2004).

【12】Y. Zhu, H.Q. Ni, H.L. Wang, J.F. He, M.F. Li, X.J. Shang and Z.C. Niu, Optoelectronics Letters 7, 325 (2011).

【13】S.K. Mathis, P. Chavarkar, A.M. Andrews, U.K. Mishra and J.S. Speck, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, 2066 (2000).

【14】M. Gutiérrez, D. González, G. Aragón, M. Hopkinson and R. García, Materials Science and Engineering: B 80, 27 (2001).

【15】L.J. Mawst, J.D. Kirch, C.C. Chang, T. Kim, T. Garrod and D. Botez, Journal of Crystal Growth 370, 230 (2013).

【16】L. Zhao, J.G. Sun, Z.X. Guo and G.Q. Miao, Materials Letters 106, 222 (2013).

【17】L.H. Wong, J.P. Liu, F. Romanato, C.C. Wong and Y.L. Foo, Applied Physics Letters 90, 061913 (2007).

【18】T. Wosiński, T. Figielski, A. M kosa, W. Dobrowolski, O. Pelya and B. Pécz, Materials Science and Engineering: B 91, 367 (2002).

【19】J. Kim, E. Yun, J. Yu, K. Park, S. Chai, J. Yang and S. Choi, Materials Letters 53, 446 (2002).

引用该论文

ZHAO Liang,GUO Zuo-xing,YUAN De-zeng,WEI Qiu-lin,ZHAO Lei. TEM study of dislocations structure in In_0.82Ga_0.18As/In Pheterostructure with InGaAs as buffer layer[J]. 光电子快报（英文版）, 2016, 12(3): 192-194

ZHAO Liang,GUO Zuo-xing,YUAN De-zeng,WEI Qiu-lin,ZHAO Lei. TEM study of dislocations structure in In_0.82Ga_0.18As/In Pheterostructure with InGaAs as buffer layer[J]. Optoelectronics Letters, 2016, 12(3): 192-194