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TEM study of dislocations structure in In0.82Ga0.18As/In Pheterostructure with InGaAs as buffer layer

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Abstract

In order to improve the quality of detector, InxGa1-xAs (x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in InxGa1-xAs (x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

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DOI:10.1007/s11801-016-5272-6

基金项目:This work has been supported by the National Natural Science Foundation of China (No.61474053), and the 2014 Natural Science Basic Research Open Foundation of the Key Lab. of Automobile Materials, Ministry of Education, Jilin University (No.1018320144001).

收稿日期:2015-12-24

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作者单位    点击查看

ZHAO Liang:Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China
GUO Zuo-xing:Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China
YUAN De-zeng:Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China
WEI Qiu-lin:Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China
ZHAO Lei:Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China

联系人作者:ZHAO Lei(zljolly@jlu.edu.cn)

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引用该论文

ZHAO Liang,GUO Zuo-xing,YUAN De-zeng,WEI Qiu-lin,ZHAO Lei. TEM study of dislocations structure in In0.82Ga0.18As/In Pheterostructure with InGaAs as buffer layer[J]. 光电子快报(英文版), 2016, 12(3): 192-194

ZHAO Liang,GUO Zuo-xing,YUAN De-zeng,WEI Qiu-lin,ZHAO Lei. TEM study of dislocations structure in In0.82Ga0.18As/In Pheterostructure with InGaAs as buffer layer[J]. Optoelectronics Letters, 2016, 12(3): 192-194

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