制备了以ZnPc(OC8H17OPyCH3I)8为阴极缓冲层、P3HT∶PCBM为有源层的有机太阳能电池。 对阴极缓冲层ZnPc(OC8H17OPyCH3I)8薄膜分别进行了溶剂蒸汽退火和过渡舱惰性气体流退火处理, 并利用原子力显微镜(AFM)对缓冲层表面形貌进行了表征。结果表明: 这两种退火方法都使缓冲层形貌得以改善。电池效率从2.14%提高到3.76%, 电流密度从8.12 mA/cm2提高到10.71 mA/cm2, 填充因子从0.45提高到0.61。与传统器件相比, 退火处理的阴极缓冲层器件的稳定性也得到了改善, 器件寿命延长了1.4倍。这种简单阴极界面处理方法为改善聚合物太阳能电池性能提供了有效途径。

The inverted organic solar cells with ZnPc(OC8H17OPyCH3I)8 film as cathode buffer layer and P3HT∶PCBM as active layer were fabricated. The cathode buffer layers were treated by the solvent vapor and airflow annealing to investigate the effect of the annealing treatment methods on the device performance. The results indicate that the annealing treatment can effectively improve the morphology of the buffer layers. The power conversion efficiency(PCE) of the solar cell is improved from 2.14% to 3.76%, the current intensity(Jsc) increases from 8.12 mA/cm2 to 10.71 mA/cm2, and the fill factor(FF) is improved from 0.45 to 0.61 for the annealing process. More importantly, the stability of the device is enhanced, with the device life being 1.4 times that of the conventional device. This simple cathode interface treatment method provides an effective way to improve the performance of polymer solar cells.