采用光致荧光发射谱(PL)和时间分辨荧光发射谱(TRPL)研究了GaAs间隔层厚度对自组装生长的双层InAs/GaAs量子点分子光学性质的影响.首先，测量低温下改变激发强度的PL谱，底层量子点和顶层量子点的PL强度比值随激发强度发生变化，表明两层量子点之间的耦合作用和层间载流子的转移随着间隔层厚度变大而变弱.接着测量改变温度的PL谱，量子点荧光光谱峰值位置(Emax)、半峰全宽及积分强度随温度发生变化，表明GaAs间隔层厚度直接影响到量子点内载流子的动力学过程和量子点发光的热淬灭过程.最后，TRPL测量发现60 mL比40 mL间隔层厚度样品的载流子隧穿时间有明显延长.

The optical properties of self-assembled bilayer InAs/GaAs quantum dots (QDs) are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL) as a function of the GaAs spacer thickness. First,the PL spectrum change with excitation intensity are investigated,the variation of PL intensity ratio between the seed layer of QDs (SQDs) and the top layer of QDs (TQDs) with respect to the excitation laser intensity reveals that the coupling and subsequently the interlayer carrier transfer between the two layers of QDs decreases with increasing the GaAs spacer thickness. Then, the temperature-dependent PL behaviors, in measurement of the peak energy (Emax), linewidth (Full Width of Half Maximum, FWHM), and the integrated intensity of QDs, show that the GaAs spacer thickness strongly affect the dynamics and the thermal quenching process of carrier in the bilayer QD structrures. At last,TRPL measurements show that the carrier tunneling time of the 60ML spacer QD sample is significantly longer than that of the 40ML spacer QD sample.