光学与光电技术, 2017, 15 (5): 85, 网络出版: 2017-11-07
制备工艺对ITO薄膜的光电特性影响研究
Optical and Electrical Properties of ITO Films by Process
制备工艺 微结构 光电特性 沉积速率 氧空位 process micro structure photo-electrical properties deposition rate compact oxygen vacancy
摘要
应用电子束在真空条件下沉积氧化铟锡(Indium-Tin Oxide,ITO)薄膜,研究不同生长条件(温度、速率、厚度及氧气流量)对ITO薄膜光电特性的影响,结果表明ITO薄膜表面微结构随着沉积温度上升逐渐变得平整,晶体结构强烈地依赖于ITO薄膜生长过程的沉积速率,氧气流量会影响ITO薄膜晶体结构的完整性,氧空位会引起晶体结构变化造成薄膜光电特性差异,适中的沉积速率会得到致密性较好的ITO薄膜,通过实验研究,为LED生产ITO薄膜工艺提供一定的技术依据。
Abstract
An indium tin oxide (ITO) thin film is deposited under vacuum using an electron beam. The effects of different growth conditions (temperature, rate, thickness and oxygen flow) on the photoelectric properties of ITO thin films are studied. The results show that the surface microstructure of ITO film gradually becomes smooth with the increase of deposition temperature. The crystal structure strongly depends on the deposition rate of ITO film growth process. The oxygen flow rate will affect the integrity of the crystal structure of ITO thin films. Oxygen vacancy leads to the difference of photoelectric properties caused by the change of crystal structure, and the moderate deposition rate will be better ITO film.
肖和平, 王宇, 郭冠军. 制备工艺对ITO薄膜的光电特性影响研究[J]. 光学与光电技术, 2017, 15(5): 85. XIAO He-ping, WANG Yu, GUO Guan-jun. Optical and Electrical Properties of ITO Films by Process[J]. OPTICS & OPTOELECTRONIC TECHNOLOGY, 2017, 15(5): 85.