分别采用液相外延瞬态法的两种不同模式--步冷法和超冷法生长了GaAs0.9Sb0.1薄膜。采用X射线衍射谱、扫描电镜、拉曼光谱仪研究了GaAs0.9Sb0.1薄膜的晶体结构、截面形貌和发光性能等。研究结果表明：与超冷法相比，步冷法生长外延薄膜的速率更加缓慢，但薄膜晶体结构的质量更高、界面更平滑；两种不同液相外延模式生长的GaAs0.9Sb0.1薄膜的光致发光性能差别不大。

GaAs0.9Sb0.1 epilayer is grown by two growth models of liquid phase epitaxy technique, and the two models are step-cooling and super-cooling, respectively. The crystal structure, cross-sectional image, and luminescence property of GaAs0.9Sb0.1 epilayer are studied with utilization of X-ray diffractometer, scanning electron microscope, and Raman spectometer. The results show that the growth rate of GaAs0.9Sb0.1 epilayer grown with step-cooling is slower than that with super-cooling, and GaAs0.9Sb0.1 epilayer grown by step-cooling exhibits higher-quality crystalline structure and smoother interface. However, the GaAs0.9Sb0.1 epilayer grown by the two growth models display substantially similar photoluminescence property.