为了研究在半导体上施加外磁场对太赫兹辐射的影响, 基于drude-Lorentz模型对三种不同的半导体材料GaAs、InAs、InSb在不同的外磁场方向下太赫兹辐射功率的变化进行了研究。研究结果发现, 外磁场对具有较小有效质量和较高电子迁移率的半导体材料的太赫兹辐射增强效应最明显。此外, 太赫兹辐射最强时GaAs和InAs的最佳外磁场方向是沿y轴负方向, InSb的最佳外磁场方向是在与x轴及相反方向成40°夹角的x-z平面内。

In order to study the influence of the terahertz radiation caused by external magnetic field on semiconductors, calculated the variation of terahertz radiation power of three different semiconductor materials GaAs, InAs, InSb in different direction of the external magnetic field based on drude-Lorentz model. The results show that the external magnetic field has the most obvious effect on the enhancement of terahertz radiation of semiconductor materials with smaller effective mass and higher electron mobility. In addition, the optimal direction of the external magnetic field for GaAs and InAs is along the negative direction of y axis, and the optimum magnetic field direction is 40 degrees angle with the x axis and the opposite direction in x-z plane.