利用纳秒激光辐照PV型线阵HgCdTe探测器的局部光敏元, 获得了该类器件损伤前被辐照和未被辐照像元输出信号随激光能量密度变化的全部响应规律, 指出基底信号二阶段响应和光信号六阶段响应的规律特点, 同时给出不同响应阶段激光能量密度阈值范围; 发现了基底信号整体跃变的零压输出、光响应信号输出凹陷-回升-凸起等反常响应现象; 并从探测器读出电路和热生电动势的角度揭示了反常响应现象的产生机理, 希望能加强对阵列型HgCdTe探测器光响应特性的深刻认识, 为该类器件的技术创新提供启示。

The response law of output signal for irradiated and unirradiated pixel in PV-type HgCdTe linear array infrared detector was researched when energy density of nanosecond pulse laser, less than destroyed threshold, was increased. The features of two-stage response of base signal and six-stage response of optical signal were pointed out, the energy density threshold range of each response phase was also given; some abnormal response phenomena such as zero voltage output of base signal integral jumping, sag output-recovery-convex of optical response signal were discovered. Based on the above results, from the point of view of readout circuit and thermo-induced electrodynamic force, the mechanism of abnormal response was revealed. We hope to strengthen the deep understanding of the photoresponse characteristics of HgCdTe array infrared detector, and provide inspiration for the technical innovation of this kind of device.