发光学报, 2017, 38 (11): 1510, 网络出版: 2017-12-25  

高In组分InGaNAs/GaAs量子阱的生长及发光特性

Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition
单睿 1,2周海春 1,2郝瑞亭 1,2欧全宏 1,2郭杰 1,2
作者单位
1 云南省光电信息技术重点实验室, 云南 昆明 650500
2 云南师范大学 物理与电子信息学院, 云南 昆明 650500
摘要
采用分子束外延技术(MBE)在GaAs衬底上外延生长高In组分(>40%)InGaNAs/GaAs量子阱材料, 工作波长覆盖1.3~1.55 μm光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和InGaNAs/GaAs量子阱的生长特性。结果表明: N组分增加会引入大量非辐射复合中心; 随着生长温度从480 ℃升高到580 ℃, N摩尔分数从2%迅速下降到0.2%; N并入组分几乎不受In组分和As压的影响, 黏附系数接近1; 生长温度在410 ℃、Ⅴ/Ⅲ束流比在25左右时, In0.4Ga0.6N0.01As0.99/GaAs量子阱PL发光强度最大, 缺陷和位错最少; 高生长速率可以获得较短的表面迁移长度和较好的晶体质量。
Abstract
InGaNAs/GaAs quantum-well (QW) with high In composition (>40%) which covered the optical fiber communication wavelength range of 1.3-1.55 μm was grown on GaAs substrate by molecular beam epitaxy (MBE). The characteristics of N atom incorporation and growth properties for InGaNAs/GaAs QW were studied by photo luminescence (PL) spectra at room temperature. The results show that the increasing of N composition can result in a large number of non-radiative recombination centers. The mole fraction of N decreases sharply from 2% to 0.2% with the growth temperature increasing from 480 ℃ to 580 ℃. The change of In composition and As pressure cannot influence the incorporation of N atoms and the adhesion coefficient of N is about 1. The PL intensity at 1.3 μm for InGaNAs/GaAs QW is strongest at the growth temperature of 410 ℃ and Ⅴ/Ⅲ ratio of ~25. Higher growth rate can obtain shorter surface migration length and improve the crystal quality.

单睿, 周海春, 郝瑞亭, 欧全宏, 郭杰. 高In组分InGaNAs/GaAs量子阱的生长及发光特性[J]. 发光学报, 2017, 38(11): 1510. SHAN Rui, ZHOU Hai-chun, HAO Rui-ting, OU Quan-hong, GUO Jie. Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition[J]. Chinese Journal of Luminescence, 2017, 38(11): 1510.

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