针对电源电路抗γ总剂量辐射性能评估问题，建立了元器件和电路的性能模型，并搭建测试电路对模型进行了测试。开展了辐照敏感关键元器件的γ总剂量辐照试验，获取了元器件关键参数随γ累积总剂量变化的实验数据，将参数变化规律注入模型，开展了电源电路抗辐射性能仿真，获得了电路关键特征参数输出电压随累积总剂量的变化规律。采用裕量与不确定性量化(QMU)方法对电源电路的抗辐射性能进行评估，并与电路实际辐照实验结果进行对比，结果表明，QMU评估结果与实际实验结果保持了较好的一致性。

To assess the radiation hardness of the power supply circuit, the models of electronic components and circuit were built based on Saber platform, and were validated by the testing circuits. Data of critical performance parameters were obtained by γ-dose experiments radiation of pivotal components. With these data, radiation hardness of power supply circuit was simulated, and data about critical performance parameter were obtained. On these bases, gamma-dose radiation hardness of power supply circuit was evaluated by quantification of margins and uncertainties (QMU) method, and the results were in good agreement with those obtained experimentally.