High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note

Yiding Lin; Kwang Hong Lee; Shuyu Bao; Xin Guo; Hong Wang; Jurgen Michel; Chuan Seng Tan

doi:doi:10.1364/PRJ.6.000046

Photonics Research, 2018, 6 (1): 01000046, Published Online: Jul. 19, 2018

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note Download： 627次

Yiding Lin ^1,2,4Kwang Hong Lee ²Shuyu Bao ^1,2Xin Guo ¹Hong Wang ¹Jurgen Michel ^2,3Chuan Seng Tan ^1,2,*

Author Affiliations

¹ School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

² Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

⁴ e-mail: liny0075@e.ntu.edu.sg

Photodetectors Photodiodes Optoelectronics Semiconductor materials Thin film devices and applications

Abstract

This publisher’s note reports corrections to Eq. (1) in [Photon. Res.5, 702 (2017)PRHEIZ2327-9125

10.1364/PRJ.5.000702

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Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, Chuan Seng Tan. High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note[J]. Photonics Research, 2018, 6(1): 01000046.

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