研究了基于Al2O3中间层的InP/SOI晶片键合技术。该方案利用原子层沉积技术在SOI晶片表面形成Al2O3作为InP/SOI键合中间层, 同时采用氧等离子体工艺对晶片表面进行活化处理。原子力显微镜和接触角测试结果表明, 氧等离子体处理使得晶片的表面特性更适于实现键合。透射电子显微镜和X射线能谱仪测试结果证实, 采用Al2O3中间层可以实现InP晶片与SOI晶片的可靠键合。

Direct wafer bonding between InP and SOI wafers was carried out with Al2O3 as the intermediate layer. The Al2O3 intermediate layer was formed on the surface of SOI wafer through atomic layer deposition, followed by surface activation of the wafer with oxygen plasma treatment. Atomic force microscope and contact angle tests show that oxygen plasma treatment makes the surface of wafer suitable for direct wafer bonding. Test results of transmission electron microscope and energy-dispersive X-ray spectroscopy confirm the reliable wafer bonding between InP and SOI wafers using Al2O3 as the intermediate layer.