在常压条件下采用化学气相淀积(CVD)技术在有石墨烯插入层的衬底上生长GaN纳米线, 研究了生长温度、石墨烯插入层、催化剂等因素对GaN纳米线的形貌、光学特性以及结构的影响。通过扫描电子显微镜(SEM)、光致发光(PL)谱、拉曼(Raman)谱和透射电子显微镜(TEM)等表征手段对GaN纳米线的形貌、光学特性以及结构进行表征。结果表明, 在1 100 ℃条件下, 同时有石墨烯插层和催化剂的衬底表面能够获得低应力单晶GaN纳米线。石墨烯、催化剂对于获得低应力单晶GaN纳米线有重要的作用。

In this paper, GaN nanowires were grown on substrates with the graphene insert layer by chemical vapor deposition (CVD) technology at atmosphere pressure. The effects of growth temperature, graphene insert layer, catalyst on the morphology, optical properties and structures of GaN nanowires were studied systematically. The morphology, optical properties and structures of GaN nanowires were characterized by scanning electron microscopy (SEM), photoluminescence (PL), Raman spectra and transmission electron microscopy (TEM). The results show that low-stress and single crystal GaN nanowires can be grown on the substrates which both have graphene insert layer and catalyst at 1 100 ℃. Graphene insert layer and catalyst play an important role in obtaining low-stress and single crystal GaN nanowires.