光电子技术, 2017, 37 (1): 27, 网络出版: 2017-12-25
非晶氧化铟镁薄膜晶体管的光电特性研究
Photo-electrical Properties of Amorphous MgInO Thin Film Transistors
薄膜晶体管 金属氧化物 紫外探测 氧化铟镁 光电特性 thin film transistors (TFTs) metal oxide ultra violet detection MgInO photo-electrical properties
摘要
研究了氧化铟镁(MgInO)薄膜晶体管在不同波长下的光响应。实验表明, 入射光波长减小, 光电流将增加。和积累区相比, 耗尽区具有更高的信噪比, 更适合于紫外探测。器件在短波时具有较大的响应度(>1 A/W), 截止波长在360 nm左右。同时研究了源漏电压和沟道长度对光电流的影响。光电流与源漏电压之间具有良好的线性关系; 沟长变短, 渡越时间减小, 可获得更高的光电增益。
Abstract
The responsivity of MgInO TFTs in the depletion state with different wavelength was investigated. The devices show a cutoff wavelength of 360 nm, which is suitable for UV detection. In addition, the influences of source-to-drain voltage and the channel length on the photocurrent were illustrated as well. The photocurrent shows a high linearity to source-to-drain voltage, while with the channel length decreasing, the photocurrent increases as the transit time is shortened.
卢慧玲, 张乐陶, 周航, 张盛东. 非晶氧化铟镁薄膜晶体管的光电特性研究[J]. 光电子技术, 2017, 37(1): 27. LU Huiling, ZHANG Letao, ZHOU Hang, ZHANG Shengdong. Photo-electrical Properties of Amorphous MgInO Thin Film Transistors[J]. Optoelectronic Technology, 2017, 37(1): 27.