光电工程, 2017, 44 (12): 1146, 网络出版: 2018-01-17
飞秒激光过饱和掺杂硅材料的研究及发展
Research and development of femtosecond-laser hyperdoped silicon
摘要
飞秒激光利用其超快的作用时间、超强的峰值功率的特性,可以与半导体材料表面发生瞬态光化学反应,从而对材料进行有效的掺杂,且可以实现超过材料固溶度极限的过饱和掺杂,同时能在材料表面形成准周期的微纳结构。导致半导体表面性质发生改变,产生超宽光谱高吸收的特性,从而突破传统物理限制,并由此产生了一系列全新的应用。本文总结了飞秒激光与硅相互作用的基本理论和几种物理模型,介绍了其在相关领域的应用,并对飞秒激光过饱和掺杂及改性硅的发展前景作出展望。
Abstract
Femtosecond laser pulses induce intriguing transient photochemical reactions with semiconductors at the sample surface, due to its ultrashort duration and ultrahigh peak power. Taking advantage of these character-istics, material can be effectively doped. The doping level is likely far beyond the solid solubility limit (so called supersaturated doping), meanwhile quasi-periodic structures with micro/nano- scales are created at the material surface as well. As a result, surface properties are strikingly changed, e.g. ultra-high absorption over a broad range from near ultraviolet to infrared emerges, which breaks the limit of traditional physics and brings novel ap-plications. In this review, we summarize the basic theories and several physical models of femtosecond la-ser-silicon interaction, introduce its applications in relevant areas, and depict future prospects of femtosecond laser hyperdoped and processed silicon.
贾子熙, 黄松, 进晓荣, 杨明, 陈战东, 姚江宏, 吴强, 许京军. 飞秒激光过饱和掺杂硅材料的研究及发展[J]. 光电工程, 2017, 44(12): 1146. Zixi Jia, Song Huang, Xiaorong Jin, Ming Yang, Zhandong Chen, Jianghong Yao, Qiang Wu, Jingjun Xu. Research and development of femtosecond-laser hyperdoped silicon[J]. Opto-Electronic Engineering, 2017, 44(12): 1146.